Semiconductor laser device and method for manufacturing the same

Details Semiconductor laser device and method for manufacturing the same Semiconductor laser device and method for manufacturing the same

1993-12-06

1996-04-02

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

437129, H01S 318, H01L 2131

Patent

active

055047688

ABSTRACT:
A method for manufacturing the semiconductor laser device comprising the steps of sequentially forming an active layer, a photo-waveguide layer, a cladding layer, and an ohmic contact layer on an upper surface of an InP substrate; forming a first patterned dielectric layer on the ohmic contact layer; depositing a patterned photoresist on the ohmic contact layer to define a p- electrode stripe layer; forming the p- electrode stripe layer only on a part of the ohmic contact layer; performing an annealing process; etching back the layers until the photo-waveguide layer is exposed, using the first patterned dielectric layer and the p- electrode stripe layer as an etching mask, to form a ridge; depositing a second dielectric layer on the substrate formed thus; selectively removing the second dielectric layer to form a contact hole on the p- electrode stripe layer; coating a bonding pad metal layer on the second dielectric layer and in the contact hole; and coating an n- electrode metal layer on bottom surface of the substrate. Since ohmic contact resistance is lowered, thermal generation and threshold current of oscillation are decreased. As a result, operating characteristics of the laser device can be largely improved.

REFERENCES:
patent: 4647953 (1987-03-01), Okajima et al.
patent: 4694460 (1987-09-01), Hayakawa et al.
patent: 5189679 (1993-02-01), Derry et al.
patent: 5222091 (1993-06-01), Holmstrom et al.

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