Semiconductor laser device and method for manufacturing the same

Details Semiconductor laser device and method for manufacturing the same Semiconductor laser device and method for manufacturing the same

1997-09-23

1999-09-07

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

059498099

ABSTRACT:
A semiconductor laser device is of a double-hetero structure having an active layer sandwiched between a first conductivity type cladding layer and a second conductivity type cladding layer, one of the first and second conductivity type cladding layers being formed by a first cladding layer and a second cladding layer. A current blocking layer is provided between the first cladding layer and the second cladding layer, and formed of a material having a forbidden band gap wider than that of the active layer and a refractive index lower than that of the one cladding layer, the current blocking layer being formed with a current injecting region having a conductivity type different from that of the one cladding layer. An over-saturation absorbing layer is formed in the current blocking layer, the over-saturation absorbing layer is formed of such a material that has approximately the same forbidden band gap as that of the active layer. It is possible to set independently the distance between the active layer and the over-saturation absorbing layer as well as the distance between the active layer and the current blocking layer, so as to provide device operation on a low operating current (lowered threshold value) with low noise and astigmatism in a multi mode instead of a longitudinal mode.

REFERENCES:
patent: 5661741 (1997-08-01), Kakimoto

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