Semiconductor laser device and method for manufacturing the same

Coherent light generators – Particular component circuitry – Optical pumping

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372 50, H01L 3300

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046479538

ABSTRACT:
A rib-waveguide semiconductor laser device comprising a first clad layer, an active layer, an optical rib-waveguide layer and a second clad layer, each composed of III-V semiconductor material, and sequentially formed on an insulating substrate or a III-V semiconductor substrate, wherein the rib-waveguide layer contains aluminum. A method for manufacturing the semiconductor laser device as defined above wherein the second clad layer is formed by metal-organic material chemical vapor deposition or molecular beam epitaxy.

REFERENCES:
Aiki et al., "Frequency Multiplexing Light Source . . . "; Appl. Phys. Letters; vol. 29, No. 8; 15 Oct. 1976; pp. 506-508.
Lee et al., "Al.sub.x Ga.sub.1-x As DH Rib-Waveguide Injection Laser"; IEEE J. of Quantum Electronics; vol. QE-11, No. 7; Jul. 1975; pp. 432-435.
Applied Physics Letters, vol. 37(3), (Aug. 1980), J. J. Coleman et al., "Single-Longitudinal-Mode Metalorganic Chemical-Vapor-Deposition Self-Aligned . . . ", pp. 262-263.
Applied Physics Letters, vol. 41(7), (Oct. 1982), P. M. Petroff et al., "Toward Quantum Well Wire: Fabrication and Optical Properties," pp. 635-638.

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