Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-01-12
2010-12-14
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S044011
Reexamination Certificate
active
07852892
ABSTRACT:
A ridge stripe semiconductor laser device includes a first conductivity type cladding layer103, an active layer104, a second conductivity type first cladding layer105, a second conductivity type second cladding layer108in a ridge-shaped stripe for confining light in a horizontal transverse direction, and a current blocking layer107formed in a region except for at least a part on a ridge that are disposed on a semiconductor substrate102. In a cross-section perpendicular to a stripe direction of the ridge, each of both lateral surfaces of the ridge includes a first surface118that is substantially perpendicular to a surface of the semiconductor substrate and extends downward from an upper end of the ridge, and a second surface119that is formed of a substantially linear skirt portion inclined surface that is inclined obliquely downward to an outside of the ridge in a skirt portion of the ridge. The first surface and the second surface are connected directly, or connected via a third intermediate surface. A (111) plane of a semiconductor constituting the second cladding layer is exposed to the second surface. The present invention provides a high power semiconductor laser device with a high kink level and a low operating current.
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Hosoi Hiroyuki
Makita Kouji
Yamanaka Michinari
Hamre Schumann Mueller & Larson P.C.
Harvey Minsun
King Joshua
Panasonic Corporation
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