Semiconductor laser device and method for manufacturing the...

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C372S050121, C372S050120, C372S050100, C372S049010

Reexamination Certificate

active

07852898

ABSTRACT:
On a first region that is a part of one main face of a semiconductor substrate1, a first semiconductor laser structure10is formed so as to have a first lower cladding layer3, a first active layer4with a first quantum well structure and first upper cladding layers5, 7, which are layered in this order from the semiconductor substrate side, thereby forming a first resonator. On a second region that is different from the first region, a second semiconductor laser structure20is formed so as to have a second lower cladding layer13, a second active layer14with a second quantum well structure and a second upper cladding layer15, 17, which are layered in this order, thereby forming a second resonator. End face coating films31, 32are formed on facets of the first and the second resonators, and a nitrogen-containing layer30is formed between the facets of the first and the second resonators and the facet coating film. In the semiconductor laser device provided with a high-output dual-wavelength lasers that are formed monolithically, the decrease of the COD level during the high-output operation of the laser can be suppressed.

REFERENCES:
patent: 4845725 (1989-07-01), Welch et al.
patent: 6067310 (2000-05-01), Hashimoto et al.
patent: 6734111 (2004-05-01), Lindstrom et al.
patent: 6803605 (2004-10-01), Lindstrom et al.
patent: 2005/0153470 (2005-07-01), Lindstrom et al.
patent: 2006/0239321 (2006-10-01), Kume et al.
patent: 3-89585 (1991-04-01), None
patent: 10-84161 (1998-03-01), None
patent: 10-223978 (1998-08-01), None
patent: 10-223979 (1998-08-01), None
patent: 2000-114654 (2000-04-01), None
patent: 2004-538652 (2004-12-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor laser device and method for manufacturing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device and method for manufacturing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device and method for manufacturing the... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4183912

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.