Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-02-01
2008-10-14
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S044010, C372S050100
Reexamination Certificate
active
07436870
ABSTRACT:
A semiconductor laser device includes: an n-type cladding layer, an active layer, and a p-type cladding layer, each being a III-V group compound semiconductor, supported on a substrate of n-type GaAs, a p-type band discontinuity reduction layer of a III-V group compound semiconductor on the p-type cladding layer, and a p-type GaAs cap layer on the band discontinuity reduction layer. The p-type cladding layer, the p-type band discontinuity reduction layer, and the p-type cap layer are each doped with a p-type dopant which is lower in diffusivity than Zn. The p-type band discontinuity reduction layer has a concentration of a p-type dopant lower in diffusivity than Zn of 2.5×1018cm−3or higher to attain desired device characteristics, for example, high power output and efficiency.
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Ono Ken'ichi
Takemi Masayoshi
Harvey Minsun
Leydig , Voit & Mayer, Ltd.
Mitsubishi Denki & Kabushiki Kaisha
Zhang Yuanda
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