Semiconductor laser device and method for manufacturing the...

Details Semiconductor laser device and method for manufacturing the... Semiconductor laser device and method for manufacturing the...

2005-12-28

2008-03-04

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046010

Reexamination Certificate

active

07339966

ABSTRACT:
The present invention provides a semiconductor laser device capable of improving reproducibility and electrical properties of the device, and a manufacturing method thereof. The semiconductor laser device according to the invention includes a first p type AlGaInP-based clad layer formed on an active layer, and a second p-type AlGaInP-based clad layer formed on the first p-type AlGaInP-based clad layer and having a ridge structure. The first p-type AlGaInP-based clad layer is Zn-doped with a concentration that restrains Zn diffusion into the active layer, and the second p-type AlGaInP-based clad layer is Mg-doped with a concentration higher than that of the first AlGaInP-based clad layer.

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patent: 5933442 (1999-08-01), Sawano et al.
patent: 6606335 (2003-08-01), Kuramata et al.
patent: 6798808 (2004-09-01), Konushi et al.
patent: 2000-286507 (2000-10-01), None
patent: WO 00/04615 (2000-01-01), None

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