Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-05-23
2006-05-23
Harvey, Min Sun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010, C372S045013
Reexamination Certificate
active
07050472
ABSTRACT:
The invention provides a semiconductor laser device including an active layer, a semiconductor layer provided with a diffraction grating, an etch-stop layer, a cladding layer provided with a stripe structure, and a current blocking layer arranged at least on a side of said stripe structure, formed in that order on a substrate. In this semiconductor laser device, the etching-stop layer is formed on the semiconductor layer with the diffraction grating, so that damage of the diffraction grating due to etching can be prevented. The invention also provides a distributed Bragg reflection semiconductor laser device, including an active layer, and a current blocking layer having a stripe-shaped window and a diffraction grating formed at least near an end face thereof. This semiconductor laser device can be manufactured with fewer crystal growth processes than conventional semiconductor laser devices.
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Mochida Atsunori
Orita Kenji
Yuri Masaaki
Hamre Schumann Mueller & Larson P.C.
Harvey Min Sun
Jackson Cornelius H.
Matsushita Electric - Industrial Co., Ltd.
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