Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-04-05
2005-04-05
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S082000, C257S086000, C257S087000, C257S094000, C257S095000, C257S096000, C257S097000, C257S103000
Reexamination Certificate
active
06876002
ABSTRACT:
A semiconductor laser element includes, on a substrate, at least a first conductive type first clad layer, an active layer, a second conductive type second clad layer, a current block layer having a stripe-shaped deficient portion extending in a direction of a resonator, a second conductive type third clad layer buried in the stripe-shaped deficient portion of the current block layer and a second conductive type protection layer provided on the third clad layer. The active layer includes at least a window region adjacent to its one end surface and an internal region having a quantum well structure, and a portion opposite to the internal region is irradiated with an ionized atom from a surface of a layer arranged on the second conductive type second clad layer side and thereafter subjected to heat treatment to form the window region. A peak wavelength λw of photoluminescence from the window region of the active layer has a relation of:in-line-formulae description="In-line Formulae" end="lead"?λw≦λi−5nmin-line-formulae description="In-line Formulae" end="tail"?with respect to a peak wavelength λi of photoluminescence from the internal region of the active layer, and a half-width of the photoluminescence from the window region is narrower than a half-width of the photoluminescence from the internal region.
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Kawato Shinichi
Konushi Fumihiro
Matsumoto Mitsuhiro
Louie Wai-Sing
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
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