Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-07-19
2005-07-19
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010, C372S044010, C372S045013, C372S049010, C372S049010, C372S049010, C372S050121, C438S036000, C438S046000, C438S047000, C438S602000, C438S603000, C438S604000, C438S605000, C438S606000, C438S607000, C438S637000, C438S779000
Reexamination Certificate
active
06920167
ABSTRACT:
A semiconductor laser device has on a compound semiconductor substrate at least a lower cladding layer, an active layer, an upper cladding layer and a contact layer. An upper part of the upper cladding layer and the contact layer are formed as a mesa-structured portion having a ridge stripe pattern, and the both sides of the mesa structured portion are buried with a current blocking layer. The laser device includes the current blocking layer having a pit-like recess penetrating thereof and extending towards the compound semiconductor substrate, and a portion of the recess other than that penetrating the current blocking layer being covered or buried with an insulating film or a compound semiconductor layer with a high resistivity. The compound semiconductor substrate and the electrode layer thus can be kept insulated in an area other than a current injection area, thereby non-emissive failure due to short-circuit is prevented.
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Hoshi Nozomu
Nagasaki Hiroki
Flores-Ruiz Delma R.
Harvey Minsun Oh
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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