Semiconductor laser device and method for fabricating the same a

Details Semiconductor laser device and method for fabricating the same a Semiconductor laser device and method for fabricating the same a

1995-08-28

1997-07-29

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

257 14, H01S 319, H01L 2906

Patent

active

056527624

ABSTRACT:
The semiconductor laser device of the invention includes: a strained quantum well structure including a well layer and a barrier layer, and a semiconductor substrate for supporting the strained quantum well structure. In the semiconductor laser device, at least one of the well layer and the barrier layer is composed of a mixed crystal where an atomic ordering is generated.

REFERENCES:
patent: 5408487 (1995-04-01), Uchida et al.
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T. Namegaya et al., "Effects of Well Number in 1.3-.mu.m GaInAsP/InP Grin-Sch Strained-Layer Quantum-Well Lasers", IEEE Journal of Quantum Electronics, vol. 30, No. 2, pp. 578-584, 1994, Feb.
T. Takiguchi et al., "Improvement of crystal quality and laser characteristics by zero net strain structure", Journal of Crystal Growth, vol. 145, pp. 892-897, 1994 (No month).
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S.N.G. Chu et al., "Atomic ordering in InGaAsP and InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition", J. Appl. Phys., vol. 72, No. 9, pp. 4118-4124, 1992, Nov.
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F. Srobar, "Free Enthalpy of Ternary Alloy Superlattice", Crystal Res. & Technol., vol. 17, No. 8, pp. 943-949, (1982) (No month).
European Search Report Dated Feb. 1, 1996.

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