Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Reexamination Certificate
2006-05-09
2006-05-09
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
C438S044000, C438S046000
Reexamination Certificate
active
07041524
ABSTRACT:
A semiconductor laser device according to the present invention has a semiconductor substrate having a first region and a second region adjacent to the first region, a first active layer formed on the first region and made of a compound semiconductor, a first clad layer formed on the first active layer and made of a compound semiconductor containing a first dopant, and a second active region formed on the second region and made of a compound semiconductor containing a second dopant having a diffusion coefficient with respect to the first active region which is higher than that of the first dopant.
REFERENCES:
patent: 4318059 (1982-03-01), Lang et al.
patent: 4426704 (1984-01-01), Nagai et al.
patent: 4740978 (1988-04-01), Gobel et al.
patent: 4747110 (1988-05-01), Takahashi et al.
patent: 4817110 (1989-03-01), Tokuda et al.
patent: 5177757 (1993-01-01), Tsugami
patent: 5684818 (1997-11-01), Anayama et al.
patent: 5799027 (1998-08-01), Anayama et al.
patent: 5814534 (1998-09-01), Kimura et al.
patent: 5815522 (1998-09-01), Nagai
patent: 5882948 (1999-03-01), Jewell
patent: 5946336 (1999-08-01), Mizutani et al.
patent: 5999553 (1999-12-01), Sun
patent: 6074889 (2000-06-01), Sasaki
patent: 6377598 (2002-04-01), Watanabe et al.
patent: 6526083 (2003-02-01), Kneissl et al.
patent: 6539040 (2003-03-01), Anayama
patent: 6590918 (2003-07-01), Mannou et al.
patent: 6614817 (2003-09-01), Nomura et al.
patent: 6661824 (2003-12-01), Onishi
patent: 6671301 (2003-12-01), Onishi et al.
patent: 2001/0004114 (2001-06-01), Yuri
patent: 03-104292 (1991-05-01), None
patent: 3-104292 (1991-05-01), None
patent: 06-077594 (1994-03-01), None
patent: 09-219567 (1997-08-01), None
patent: 10-290043 (1998-10-01), None
patent: 10-335735 (1998-12-01), None
patent: 11-284280 (1999-10-01), None
patent: 11-312843 (1999-11-01), None
patent: 2001-077465 (2001-03-01), None
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Mulpuri Savitri
LandOfFree
Semiconductor laser device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor laser device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device and method for fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3632627