Semiconductor device manufacturing: process – Semiconductor substrate dicing – By electromagnetic irradiation
Reexamination Certificate
2005-08-16
2005-08-16
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
By electromagnetic irradiation
C438S460000, C438S068000, C438S113000
Reexamination Certificate
active
06930024
ABSTRACT:
A first semiconductor laminated structure including a first active layer for oscillating a first laser beam having a first wavelength band is provided on a front-side region of a substrate. A second semiconductor laminated structure including a second active layer for oscillating a second laser beam having a second wavelength band is provided on a rear-side region of the substrate. An emission direction of the first laser beam and an emission direction of the second laser beam are same.
REFERENCES:
patent: 4680769 (1987-07-01), Miller
patent: 5070509 (1991-12-01), Meyers
patent: 5708674 (1998-01-01), Beernink
patent: 6661824 (2003-12-01), Onishi
patent: 08-018154 (1996-01-01), None
patent: 11-186651 (1999-07-01), None
K. Nemoto et al., “A Laser Coupler for DVD/CD Playback by Using Monolithic Integrated 2-Wavelength LDs”, Sep. 1999, 3a-ZC-10, The 60thAutumn Technical Meeting of The Japan Society of Applied Physics.
Nhu David
Nixon & Peabody LLP
Studebaker Donald R.
LandOfFree
Semiconductor laser device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor laser device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device and method for fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3512590