Semiconductor laser device and method for fabricating the same

Details Semiconductor laser device and method for fabricating the same Semiconductor laser device and method for fabricating the same

2008-01-22

2008-01-22

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S046000, C257S012000, C257S094000

Reexamination Certificate

active

11154547

ABSTRACT:
A semiconductor laser device of the present invention includes: an active layer formed on a substrate; a first semiconductor layer formed on the active layer and made of a nitride semiconductor of a first conductivity type; a multilayer film formed on the first semiconductor layer and having a groove; and a second semiconductor layer formed on the multilayer film to fill the groove and made of a nitride semiconductor of the first conductivity type. The multilayer film is composed of a plurality of thin films containing a nitride semiconductor of a second conductivity type, and one of the thin films formed as the uppermost film is made of gallium nitride.

REFERENCES:
patent: 6238947 (2001-05-01), Shakuda
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patent: 6741623 (2004-05-01), Ishikawa et al.
patent: 7026182 (2006-04-01), Ishikawa et al.
patent: 2002/0167018 (2002-11-01), Nakamura et al.
patent: 2005/0194634 (2005-09-01), Ishikawa et al.
patent: 2005/0280022 (2005-12-01), Ueda et al.
patent: 08-097507 (1996-04-01), None

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