Semiconductor laser device and method for fabricating the same

Details Semiconductor laser device and method for fabricating the same Semiconductor laser device and method for fabricating the same

2006-12-05

2006-12-05

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010

Reexamination Certificate

active

07145930

ABSTRACT:
A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility.

REFERENCES:
patent: 5345464 (1994-09-01), Takemoto
patent: 5390205 (1995-02-01), Mori et al.
patent: 5666455 (1997-09-01), Aoki et al.
patent: 08-288589 (1996-11-01), None
T. Ohtoshi, et al., “Analysis of Current Leakage in InGaAsP/InP Buried Heterostructure Laser,” IEEE Journal of Quantum Electronics, vol. 25, No. 6, Jun. 1989, pp. 1369-1375.

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