Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2008-07-22
2008-07-22
Malsawma, Lex (Department: 2892)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C257SE33054
Reexamination Certificate
active
07402447
ABSTRACT:
A semiconductor laser device according to the present invention has a semiconductor substrate, an active layer formed on the semiconductor substrate and made of a compound semiconductor containing phosphorus, a guide layer formed on the active layer and made of a compound semiconductor a dopant diffusion preventing layer formed on the guide layer and made of a semiconductor compound containing arsenic, and a clad layer formed on the dopant diffusion preventing layer and made of a compound semiconductor containing a dopant.
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“Notice of Reasons for Rejections” No. 2002-210802 dated Mar. 22, 2006 from the Japanese Patent Office. (with Translation).
English Language translation of Notice of Reasons for Rejection for Japanese Patent Application No. 2006-202085, dated Jul. 10, 2007.
Costellia Jeffrey L.
Malsawma Lex
Matsushita Electric - Industrial Co., Ltd.
Nixon & Peabody LLP
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