Semiconductor laser device and manufacturing method thereof

Details Semiconductor laser device and manufacturing method thereof Semiconductor laser device and manufacturing method thereof

2008-07-02

2009-12-15

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046016, C372S049010

Reexamination Certificate

active

07633987

ABSTRACT:
A semiconductor laser device includes a first semiconductor laser element and a second semiconductor laser element. The first semiconductor laser element has a first end face window structure that is a region including first impurities formed near an end face, and the second semiconductor laser element has a second end face window structure that is a region including second impurities formed near an end face. The distance from a lower end of a first active layer to a lower end of the first end face window structure is shorter than the distance from a lower end of a second active layer to a lower end of the second end face window structure.

REFERENCES:
patent: 6618420 (2003-09-01), Gen-Ei et al.
patent: 7068695 (2006-06-01), Tanaka
patent: 2007/0237199 (2007-10-01), Kashima et al.
patent: 2001-057462 (2001-02-01), None

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