Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2008-03-04
2008-03-04
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S684000, C257S734000
Reexamination Certificate
active
10575899
ABSTRACT:
In a semiconductor laser device10including a semiconductor laser element14, a frame12having a front face on which the semiconductor laser element14is placed, and a resin molded portion15that covers the front and back faces of the frame12, on a front face side of the frame12, the semiconductor laser element14is enclosed with an enclosure portion15bof the resin molded portion15, and the resin molded portion15has an open front serving as a laser beam emission window15a.On a back face side of the frame12, there is provided an exposed portion16eenclosed with a U-shaped enclosure portion15dof the resin molded portion15, the exposed portion16ewhere the frame12is exposed to the outside.
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International Search Report mailed Jan. 11, 2005.
Chinese Office Action issued in Chinese Patent Application No. CN 200480030350.7, mailed Jul. 20, 2007.
Akiyoshi Shinichirou
Ueyama Kouji
Watanabe Yasuhiro
McDermott Will & Emery LLP
Sanyo Electric Co,. Ltd.
Tottori Sanyo Electric Co. Ltd.
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