Semiconductor laser device and manufacturing method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Reexamination Certificate

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C257S684000, C257S734000

Reexamination Certificate

active

10575899

ABSTRACT:
In a semiconductor laser device10including a semiconductor laser element14, a frame12having a front face on which the semiconductor laser element14is placed, and a resin molded portion15that covers the front and back faces of the frame12, on a front face side of the frame12, the semiconductor laser element14is enclosed with an enclosure portion15bof the resin molded portion15, and the resin molded portion15has an open front serving as a laser beam emission window15a.On a back face side of the frame12, there is provided an exposed portion16eenclosed with a U-shaped enclosure portion15dof the resin molded portion15, the exposed portion16ewhere the frame12is exposed to the outside.

REFERENCES:
patent: 5309460 (1994-05-01), Fujimaki et al.
patent: 6885076 (2005-04-01), Honda et al.
patent: 1443385 (2003-09-01), None
patent: 10-154848 (1998-06-01), None
patent: 11-307871 (1999-11-01), None
patent: 2000-164966 (2000-06-01), None
patent: 2001-53372 (2001-02-01), None
patent: 2002-43679 (2002-02-01), None
International Search Report mailed Jan. 11, 2005.
Chinese Office Action issued in Chinese Patent Application No. CN 200480030350.7, mailed Jul. 20, 2007.

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