Semiconductor laser device and manufacturing method thereof

Details Semiconductor laser device and manufacturing method thereof Semiconductor laser device and manufacturing method thereof

2005-05-03

2005-05-03

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046012

Reexamination Certificate

active

06888868

ABSTRACT:
Disclosed is a semiconductor laser device and manufacturing method thereof in which light absorption in a facet decreases and stable high power laser beam is generated. The semiconductor laser device having a stack structure in which a lower clad layer, an active layer, an upper clad layer, a current blocking layer, and a cap layer are sequentially formed, the semiconductor laser device includes: a Zn diffusion source layer on a facet of the stack structure; and a window layer between the Zn diffusion source layer and the stack structure, for preventing light absorption.

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