Coherent light generators – Particular active media – Semiconductor
Patent
1996-12-26
1999-10-05
Bovernick, Rodney
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
059635720
ABSTRACT:
A semiconductor laser device including an n-type cladding layer, an active layer, a p-type cladding layer having a ridge portion, an n-type optical confinement layer formed on the flat portion and side surfaces of the ridge portion of the p-type cladding layer, and an n-type current blocking layer formed on the n-type optical confinement layer in this order. The optical confinement layer is composed of a low resistivity layer doped with n-type impurity, which has a smaller refractive index than the p-type cladding layer and a bandgap energy greater than the energy of lasing light. The optical confinement layer has an impurity concentration of 5.times.10.sup.7 cm.sup.-3 or less. The n-type current blocking layer has a thickness of 0.4 .mu.m or less.
REFERENCES:
patent: 5446753 (1995-08-01), Yoshida
patent: 5528617 (1996-06-01), Kobayashi et al.
patent: 5608751 (1997-03-01), Shimoyama et al.
patent: 5608752 (1997-03-01), Goto et al.
Neamen, Semiconductor Physics and Devices: Basic Principles, Boston: Irwin, 1992, pp. 138-143.
The Japan Society of Applied Physics and Related Societies, (The 50th Autumn Meeting, 1989), p. 893, Sept. 27, 1989, Extended Abstracts.
The Japan Society of Applied Physics and Related Societies, (The 56th Autumn Meeting, 1995), p. 902, Aug. 26, 1995, Extended Abstracts.
The Japan Society of Applied Physics and Related Societies, (The 43rd. Spring Meeting, 1996), p. 1024, Mar. 26, 1996, Extended Abstracts.
14th IEEE International Semiconductor Laser Conference Digest Th3.5, 1994, pp. 243-244, (No month available).
IEEE Journal of Selected Topics in Quantum Electronics, vol. 1, No. 2, Jun. 1995, pp. 723-727.
Jpn J. Appl. Phys. vol. 34 (1995) pp. 3533-3542, Part 1, No. 7A, Jul. 1995.
Cleo'96, Technical Digest CThP6, pp. 458, 461, Jun. 6, 1996.
Hiroyama Ryoji
Ibaraki Akira
Komeda Koji
Oota Kiyoshi
Shono Masayuki
Bovernick Rodney
Leung Quyen Phan
Sanyo Electric Co,. Ltd.
LandOfFree
Semiconductor laser device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor laser device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1180168