Semiconductor laser device and manufacturing method therefor

Details Semiconductor laser device and manufacturing method therefor Semiconductor laser device and manufacturing method therefor

2005-03-08

2005-03-08

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010

Reexamination Certificate

active

06865206

ABSTRACT:
There is provided a semiconductor laser device which is generally uniform in carrier concentration of a clad layer, almost free from strain, and less demanding for time and labor in its manufacturing, and which has stable characteristics. On an n-GaAs substrate, an n-type clad layer, an active layer, a p-type clad layer, and a cap layer are stacked one on another at a temperature of 700-750° C. Widthwise both side portions of the cap layer as well as widthwise both side specified-depth portions of the p-type clad layer are removed by etching to form a ridge portion, and a current constriction layer is formed on widthwise both sides of the ridge portion. A flattening layer having a planar surface is formed on the current constriction layer and the cap layer by slow cooling LPE process at a temperature of 700° C. or lower. On the flattening layer, a contact layer is formed by MOCVD process at a temperature of about 650° C.

REFERENCES:
patent: 5227015 (1993-07-01), Fujihara et al.
patent: 5270246 (1993-12-01), Mannou et al.
patent: 5282218 (1994-01-01), Okajima et al.
patent: 5675601 (1997-10-01), Karakida et al.
patent: 5734670 (1998-03-01), Ono et al.
patent: 5932004 (1999-08-01), Morimoto et al.
patent: 6009113 (1999-12-01), Morimoto et al.
patent: 6044099 (2000-03-01), Shono et al.
patent: 6147364 (2000-11-01), Itaya et al.
patent: 6242764 (2001-06-01), Ohba et al.
patent: 6333946 (2001-12-01), Miyashita et al.
patent: 6470039 (2002-10-01), Ukita
patent: 07-074429 (1995-03-01), None
patent: 07074429 (1995-03-01), None
patent: 03-195715 (2001-08-01), None

Affiliated with

Also associated with

Rating

Semiconductor laser device and manufacturing method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device and manufacturing method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device and manufacturing method therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3455725