Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2006-08-29
2006-08-29
Menefee, James (Department: 2828)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S022000, C372S046010
Reexamination Certificate
active
07098064
ABSTRACT:
Immediately after stacking of a barrier layer formed of GaAsP of a multiple-strain quantum well active layer105at a growth temperature of 650° C., a second upper guide layer126formed of AlGaAs is stacked. This second upper guide layer126is grown while the temperature is kept at 650° C., which is a growth temperature suitable for P-based layers. By reducing the desorption of P from the barrier layer, the roughness level of the interface between the barrier layer and the second upper guide layer126is lowered to 20 Å or less. Thereafter, a first upper guide layer106is stacked. Growth temperature of this first upper guide layer106, which is 650° C. at a start of the growth, is started to be increased concurrently with the growth, and gradually elevated until an end of the growth so as to reach 750° C. at the end of the growth.
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Menefee James
Nguyen Phillip
Sharp Kabushiki Kaisha
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