Semiconductor laser device and its manufacturing method

Details Semiconductor laser device and its manufacturing method Semiconductor laser device and its manufacturing method

2007-05-22

2007-05-22

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S046010

Reexamination Certificate

active

10845666

ABSTRACT:
A semiconductor laser device comprises: a cladding layer of a first conductivity type; an active layer provided on the cladding layer; and a cladding layer of a second conductivity type provided on the active layer. At least a part of the cladding layer of the second conductivity type has a ridge stripe. The ridge stripe includes: an upper part having substantially vertical sidewalls; and a lower portion having sidewalls inclined so that the stripe becomes wider toward the active layer.

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PCT Patent Application No. PCT/JP99/04922 filed on Nov. 29, 2002 entitled “Semiconductor Laser Element, Method of Fabrication Thereof, And Multi-Wavelength Monolithic Semiconductor Laser Device,” Tanaka, et al., Publication No. WO 00/21169.

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