Semiconductor laser device and its manufacturing method

Details Semiconductor laser device and its manufacturing method Semiconductor laser device and its manufacturing method

2006-12-12

2006-12-12

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

Reexamination Certificate

active

07149233

ABSTRACT:
A semiconductor laser device have, on a substrate, a semiconductor layer including an active layer sandwiched between an n-type layer and a p-type layer, the semiconductor layer having a sonator face formed by etching and a projection projecting out in an emission direction relatively to the resonator face, wherein a protective film is formed to extend from the resonator face to an end face of the projection, and, an emission critical angle, which is the largest angle at which light emitted from the resonator face can be radiated without being blocked by the projection and the protective film formed on the projection, is larger than an emission half-angle of an emission distribution in a vertical direction of a laser beam emitted from the resonator face.

REFERENCES:
patent: 4951291 (1990-08-01), Miyauchi et al.
patent: 61-272987 (1986-12-01), None
patent: 04-255285 (1992-09-01), None
patent: 08-191171 (1996-07-01), None
patent: H08-191171 (1996-07-01), None
patent: 09-223844 (1997-08-01), None
patent: H09-223844 (1997-08-01), None
patent: 09-260777 (1997-10-01), None
patent: 11-074615 (1999-03-01), None
patent: 11-74615 (1999-03-01), None
patent: H11-74615 (1999-03-01), None
patent: 11-354891 (1999-12-01), None
patent: H11-354891 (1999-12-01), None
patent: 2000-031601 (2000-01-01), None

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