Semiconductor laser device and fabrication method thereof

Details Semiconductor laser device and fabrication method thereof Semiconductor laser device and fabrication method thereof

2005-05-03

2005-05-03

Nguyen, Dung T. (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S044010, C372S046012

Reexamination Certificate

active

06888867

ABSTRACT:
A semiconductor laser device includes a substrate and an n-GaN layer composed of a nitride semiconductor formed on the substrate. The substrate includes a trench having as a slope a plane inclined 62 degrees from the main plane of the substrate, or a plane inclined within 3 degrees in an arbitrary direction from the inclined plane. The n-GaN layer is formed on the slope. On the n-GaN layer are formed a lower clad layer, an active layer, and an upper clad layer, each composed of a nitride semiconductor. The active layer has a plane orientation substantially matching the plane orientation of the main plane.

REFERENCES:
patent: 5689123 (1997-11-01), Major et al.
patent: 5835516 (1998-11-01), Miyashita et al.
patent: 5909036 (1999-06-01), Tanaka et al.
patent: 5920767 (1999-07-01), Horie et al.
patent: 5974068 (1999-10-01), Adachi et al.
patent: 6009112 (1999-12-01), Uchida
patent: 6023484 (2000-02-01), Matsumoto et al.
patent: 6151347 (2000-11-01), Noel et al.
patent: 6265733 (2001-07-01), Shimoyama et al.
patent: 6522676 (2003-02-01), Goto et al.
patent: 6635901 (2003-10-01), Sawaki et al.
patent: 20020084467 (2002-07-01), Krames et al.
patent: 20020145148 (2002-10-01), Okuyama et al.
patent: 09199419 (1997-07-01), None
U.S. Appl. No. 10/021,677, filed Dec. 12, 2001, Sawaki et al.

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