Semiconductor laser device and fabrication method thereof

Details Semiconductor laser device and fabrication method thereof Semiconductor laser device and fabrication method thereof

2008-07-15

2008-07-15

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C438S048000, C438S065000, C438S064000, C438S054000, C438S059000, C372S043010, C372S036000, C257S432000, C257S433000, C257S434000

Reexamination Certificate

active

07399997

ABSTRACT:
A semiconductor laser device aimed to be reduced in size and that can maintain high position accuracy, and a fabrication method of such a semiconductor laser device are achieved. A semiconductor laser device includes a stem as a base member, and a cap member. The stem includes a main unit having a reference plane, and a heat sink platform as an element mount unit, located on the reference plane for mounting a laser element. The cap member is set on the reference plane of the stem so as to cover the heat sink platform. A hole is formed at the sidewall of the cap member facing the heat sink platform. Fixation between the cap member and the stem is established by fixedly attaching the portion at the inner side of the sidewall of the cap member adjacent the hole to the outer circumferential plane of a heat sink platform.

REFERENCES:
patent: 4338577 (1982-07-01), Sato et al.
patent: 7170102 (2007-01-01), Tsuji
patent: 6-291418 (1994-10-01), None
patent: 7-142813 (1995-06-01), None
U.S. Appl. No. 10/845,242, filed May 14, 2004.

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