Semiconductor laser device and fabricating method thereof

Details Semiconductor laser device and fabricating method thereof Semiconductor laser device and fabricating method thereof

2005-09-06

2005-09-06

Leung, Quyen (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045013

Reexamination Certificate

active

06940884

ABSTRACT:
Provided is a semiconductor laser device in which at least an n-type first cladding layer, an active layer and a p-type second cladding layer are formed on or above an n-type semiconductor substrate. An n-type current block layer having a stripe-shaped groove-like removed portion is formed on the second cladding layer and at least a p-type third cladding layer is formed on the current block layer including the stripe-shaped removed portion. The second cladding layer has a p-type C impurity concentration of 3×1017cm−3to 2×1018cm−3.

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U.S. Appl. No. 09/651,106 filed Aug. 30, 2000.

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