Semiconductor laser device and a method of producing same

Details Semiconductor laser device and a method of producing same Semiconductor laser device and a method of producing same

1988-02-16

1989-07-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

372 46, 372 45, 148DIG95, H01L 21306, H01S 318

Patent

active

048493724

ABSTRACT:
A semiconductor laser device of the buried heterostructure type in which leakage current is substantially reduced. A mesa portion carries the active lasing portion of the laser, and current blocking layers are grown at either side of the mesa portion. One of the current blocking layers has its conductivity type inverted to the opposite type to eliminate a current leakage path, thereby to provide a high efficiency low leakage current semiconductor laser. Conductivity inversion is accomplished by adjusting the impurity concentration levels in the layers on either side of the mesa portion, and controllably diffusing impurities from one layer to another until conductivity inversion is accomplished in a thin tip portion of one of the layers.

REFERENCES:
patent: 4426700 (1984-01-01), Hirao et al.
patent: 4525841 (1985-06-01), Kitamura et al.
patent: 4692206 (1987-09-01), Kaneiwa et al.
"High Power Output InGaAsP/InP Buried Heterostructure Lasers", Nakano et al., Electronics Letters, 15th Oct. 1981, vol. 17, No. 21, pp. 782-783.

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