Semiconductor laser device and a method for the manufacture ther

Details Semiconductor laser device and a method for the manufacture ther Semiconductor laser device and a method for the manufacture ther

1994-07-29

1997-03-04

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

056087500

ABSTRACT:
A semiconductor laser device is provided which is designed to prevent end surface optical damage, thereby permitting an increase in the output of the semiconductor laser. To achieve this, an active layer at the light emitting end surface portion of the semiconductor laser device is recessed inwardly by a distance between 50 nm and 300 nm (depending on the amount of etching) from the end surfaces of the crystal layers lying on both sides of the active layer. The recess serves to improve the heat dissipation of the active layer portion. This results in improving the amount of light output of the semiconductor laser which is possible without causing optical damage. A method for making the device is also provided. This method permits achieving the above-noted advantages simply by adding an etching step to the conventional semiconductor laser fabrication process, without requiring special equipment or technique.

REFERENCES:
patent: 4270096 (1981-05-01), Hayashi et al.
patent: 5212704 (1993-05-01), Chen et al.
patent: 5280535 (1994-01-01), Gfeller et al.
patent: 5296717 (1994-03-01), Valster et al.
John A. F. Peek, "Water Vapor, Facet Erosion, and the Degradation of (Al,Ga)As DH Lasers Operated at CW Output Powers of Up to 3 mW/.mu. Stripewidth", IEEE Journal of Quantum Electronics, vol. QE-17, No. 5, May 1981, pp. 781-787.

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