Coherent light generators – Particular active media – Semiconductor
Patent
1991-09-20
1993-07-13
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 48, 372 49, H01S 319
Patent
active
052280470
ABSTRACT:
A semiconductor laser device is provided which is constituted by semiconductor materials so as to emit laser light from a cavity end facet, the laser light being excited in a waveguide within an active layer sandwiched between a pair of cladding layers, wherein a window layer made of a semiconductor material having a band gap greater than that of the active layer is formed on the cavity end facet from which the laser light is emitted, so as to have a thickness sufficient to prevent local generation of crystal defects by lattice mismatching between the semiconductor material of the window layer and the semiconductor materials at the cavity end facet. There is also provided a method for producing such a semiconductor laser device with high efficiency.
REFERENCES:
patent: 4731792 (1988-03-01), Shimizu et al.
patent: 4879725 (1989-11-01), Kawanishi et al.
patent: 4901328 (1990-02-01), Matsui et al.
Patent Abstracts of Japan, vol. 13, No. 226, (E-763)[3574] May 25, 1989.
Patent Abstracts of Japan, vol. 13, No. 147, (E-741) Apr. 11, 1989.
Patent Abstracts of Japan, vol. 13, No. 548, (E-856) Dec. 7, 1989.
Patent Abstracts of Japan, vol. 13, No. 334, (E-797) Aug. 3, 1989.
Nannichi et al., Japanese J. Appl. Phys. (1988) 27(12):L2367-2369.
Sasaki et al., Japanese J. Appl. Phys. (1991) 30(5B):L904-L906.
K. Itaya et al., Preprint of Annual Meeting of the Society of Applied Physics, Spring 1988, pp. 904-905 (31a-ZP-4 and 31a-ZP-5).
S. Yamamoto et al., Applied Physics Letters (1982) 40(5):372-374.
Kondo Masaki
Matsumoto Mitsuhiro
Nakatsu Hiroshi
Sasaki Kazuaki
Takeoka Tadashi
Epps Georgia Y.
Sharp Kabushiki Kaisha
LandOfFree
Semiconductor laser device and a method for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor laser device and a method for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device and a method for producing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2318465