Semiconductor laser device, and a method for producing a compoun

Details Semiconductor laser device, and a method for producing a compoun Semiconductor laser device, and a method for producing a compoun

1993-06-21

1994-11-01

Thomas, Tom

Fishing, trapping, and vermin destroying

437126, 437133, 437905, 148DIG95, H01L 2120

Patent

active

053607627

ABSTRACT:
On a GaAs substrate (Al.sub.Y Ga.sub.1-Y).sub.0.5 In.sub.0.5 P crystal layers (0.ltoreq.Y.ltoreq.1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the layered substrate to a temperature at which In in the crystal layers evaporates, the portion near the surface of the crystal layers is changed into an Al.sub.Y Ga.sub.1-Y As crystal layer (0.ltoreq.Y.ltoreq.1) of a thickness of several molecules, on which layer an Al.sub.X Ga.sub.1-X As crystal layer (0.ltoreq.X.ltoreq.1) is formed. Since the surface of the Al.sub.Y Ga.sub.1-Y As crystal layer has been purl fled, the formed Al.sub.X Ga.sub.1-X As crystal layer has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.

REFERENCES:
patent: 4734385 (1988-03-01), Mihashi et al.
patent: 4963507 (1990-10-01), Amann et al.
patent: 5068204 (1991-11-01), Kukimoto et al.
patent: 5116769 (1992-05-01), Seina
patent: 5194400 (1993-03-01), Takamori et al.
Ikeda et al., "Room-temperature continuous-wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition" Applied Physics Letters (1985) 47(10):1027-1028.
Hayakawa et al., "Molecular beam epitaxial growth of (Al.sub.y Ga.sub.1-y)In.sub.1-x P(x.about.0.5) on (100) GaAs" Journal of Crystal Growth (1989) 95:343-347.

Affiliated with

Also associated with

Rating

Semiconductor laser device, and a method for producing a compoun does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device, and a method for producing a compoun, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device, and a method for producing a compoun will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1802296