Semiconductor laser device and a method for fabricating the same

Details Semiconductor laser device and a method for fabricating the same Semiconductor laser device and a method for fabricating the same

1975-08-20

1977-05-24

Edlow, Martin H.

Oscillators

Relaxation oscillators

357 17, 331 945H, 357 16, H01L 3300, H01S 3319, H01L 29161

Patent

active

040259390

ABSTRACT:
A semiconductor laser device comprises an n-type GaAs layer, an n-type GaAlAs layer disposed on the n-type GaAs layer, an optical confinement region comprising a laser active region consisting of GaAs disposed on the n-type GaAlAs layer, a first p-type GaAlAs region whose aluminum content is less than that of the n-type GaAlAs layer, disposed on said laser active region and a second p-type GaAlAs region whose aluminum content is less than that of the first p-type GaAlAs region, the surface of which opposite that disposed on said first p-type GaAlAs region is a periodically corrugated surface, a p-type GaAlAs layer whose aluminum content is more than that of said first p-type GaAlAs region, disposed on the periodically corrugated surface of the second p-type GaAlAs region, a p-type GaAs layer disposed on said p-type GaAlAs layer, and electrodes disposed on the n-type and p-type GaAs layers, respectively, and which has a very low threshold value for laser oscillation and which is fabricated with a very high yield rate.

REFERENCES:
patent: 3733561 (1973-05-01), Hayashi
H. Casey et al, Appl. Phys. Lett., vol. 27, No. 3, Aug. 1, 1975 pp. 142-144.
M. Nakamuru, A. Yariv, et al, 1974 International Electron Devices Meeting, Technical Digest, Dec. 9-11, 1974, Wash. D. C. pp. 88-90.
Yariv et al, Appl. Phys. Let., vol. 27, No. 3, Aug. 1, 1975 pp. 145-146.
Nakamuro, et al, Appl. Phys. Lett., vol. 25, No. 9, Nov. 1, 1974, pp. 487-488.

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