Semiconductor laser device

Coherent light generators – Particular active media – Semiconductor

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H01S 3085

Patent

active

060440996

ABSTRACT:
A semiconductor laser device comprises an n-type cladding layer, an active layer formed on the n-type cladding layer and having a quantum well structure including one or a plurality of quantum well layers, a p-type cladding layer comprising a flat portion formed on the active layer and a stripe-shaped ridge portion on the flat portion, and a current blocking layer formed on the flat portion so as to cover the side surface of the ridge portion and formed on a region on the upper surface of the ridge portion from one of facets of a cavity to a position at a predetermined distance therefrom.

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patent: 5666375 (1997-09-01), Yokouchi et al.
SPIE-The International Society for Optical Engineering; vol. 1219, pp. 126-133; Jan. 16-19, 1990, Los Angeles, CA.
CLEO '91, pp. 94-97--May 14, 1991.
Electronics Letters, vol. 27, No. 8, pp. 661-662, Apr. 11, 1991.
Electronics Letters, vol. 27, No. 19, pp. 1713-1714, Sep. 12, 1991.
Electronics Letters, vol. 29, No. 4, pp. 369-370, Feb. 18, 1993.

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