Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1994-12-23

1996-09-10

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 43, 372 46, 372 48, 372 50, H01S 319

Patent

active

055552714

ABSTRACT:
On an n-type GaAs semiconductor substrate, an n-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate, an active layer and a p-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate are formed, and a p-type barrier cladding layer formed of AlGaInP system crystal or AlInP system crystal is provided in the p-type cladding layer. The p-type barrier cladding layer has a thickness through which electrons are almost not transmitted, has tensile strain, and also has band gap energy larger than that of the p-type cladding layer.

REFERENCES:
patent: 4328469 (1982-05-01), Scifres et al.
patent: 4438446 (1984-03-01), Tsang
patent: 5146466 (1992-09-01), Hamada et al.
patent: 5253265 (1993-10-01), Seko et al.
patent: 5408487 (1995-04-01), Uchida et al.
patent: 5416790 (1995-05-01), Yodoshi et al.

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