Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1993-07-29

1994-09-27

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

053512588

ABSTRACT:
A semiconductor laser device of the present invention includes: a semiconductor substrate having a top face and a bottom face; a multi-layered structure formed on the top face of the semiconductor substrate, the multi-layered structure including an active layer; a stripe-shaped ridge portion which is formed on a first region of a top face of the multi-layered structure and which extends along a cavity length direction; a current blocking layer which covers both side faces of the ridge portion and a second region of the top face of the multi-layered structure; a first electrode formed at least on a top face of the ridge portion; and a second electrode formed on the bottom face of the semiconductor substrate, wherein the current blocking layer includes an insulating film and a resin film formed on the insulating film.

REFERENCES:
patent: 4845724 (1989-07-01), Hayakawa et al.
patent: 4896328 (1990-01-01), Sekiguchi et al.
patent: 4916709 (1990-04-01), Ota et al.
patent: 5084892 (1992-01-01), Hayakawa

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