Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1977-04-12

1982-04-20

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, 372 48, H01S 319

Patent

active

043261760

ABSTRACT:
A semiconductor laser device of this invention has a built-in passive guiding mechanism along the junction plane by growing planar double hetero (DH) layers on a grooved or projected substrate. It operates stably in the lowest transverse mode and provides light-output versus current characteristics fee of either kinks or any anomalies.

REFERENCES:
patent: 3883821 (1975-05-01), Miller
patent: 3978428 (1976-08-01), Burnham et al.
Kirkby et al., "Channeled Substrate Buried Heterostructure GaAs-(GaAl)As", J. of App. Phys. vol. 47, No. 10, Oct. 1976, pp 4578-4589.

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