Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1979-09-20

1982-02-09

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, H01S 319

Patent

active

043152260

ABSTRACT:
A semiconductor laser device is capable of producing an increased optical output power with improved optical characteristics without being subjected to mode distortions in the output beam, while retaining advantageous features inherent to a semiconductor laser device of a buried heterostructure. The semiconductor laser device comprises an optical confinement region which is constituted by at least first, second, third and fourth semiconductor layers successively laminated on a predetemined semiconductor substrate. The second semiconductor layer has a relatively small refractive index and a relatively wide band gap as compared with those of the third semiconductor layer, while the first and the fourth semiconductor layers which are of the conductivity types opposite to each other have relatively small refractive indexes as compared with the second and the third semiconductor layers. The band gaps of the fourth and the second semiconductor layers are relatively large as compared with that of the third semiconductor layer. Difference in the band gap at least between the second and the third semiconductor layers is not smaller than 0.15 eV.

REFERENCES:
Kressel et al., "Low-Threshold LOC GaAs Injection Lasers", Applied Physics Letters, vol. 18, No. 2, Jan. 15, 1971, pp. 43-45.
Tsukada, "GaAs-Ga.sub.1-x Al.sub.x As Buried-Heterostructure Injection Lasers", Journal of Applied Physics, vol. 45, No. 11, Nov. 1974, pp. 4899-4906.
Pawlik et Doppel-"Doppal-Hetero-Strukturkaser fur Optische Nachrichtenubertragung", Siemens Forsch.-u. Entwickl.-Ber. Bd. 2(1973), pp. 210-217.
Thompson et al., "(GaAl)As Lasers With a Heterostructure for Optical Confinement and Additional Heterojunctions for Extreme Carrier Confinement", IEEE Journal of Quantum Electronics, vol. QE-9, No. 2, Feb. 1973, pp. 311-318.
Casey et al., "GaAs-Al.sub.x Ga.sub.1-x As Heterostructure Laser with Separate Optical and Carrier Confinement", J. Appl. Phys., vol. 45, No. 1, Jan. 1974, pp. 322-333.
Cho et al., "Continuous Room-Temperature Operation of GaAs-Al.sub.x Ga.sub.1-x As Double-Heterostructure Lasers . . . ", App. Phys. Lett., vol. 28, No. 9, 1 May 1976, pp. 501-503.
Thompson et al., "Narrow-Beam Five-Layer (GaAl)As/GaAs Heterostructure Lasers . . . ", J. of Appl. Phys., vol. 47, No. 4, Apr. 1976, pp. 1501-1514.
Kajimura et al., "Leaky-Mode Buried-Heterostructure AlGaAs Injection Lasers", App. Phys. Lett., vol. 30, No. 11, June 1977, pp. 590-591.

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