Oscillators – Molecular or particle resonant type
Patent
1979-07-10
1981-09-08
Davie, James W.
Oscillators
Molecular or particle resonant type
357 16, 357 17, H01S 319
Patent
active
042887577
ABSTRACT:
In certain applications, it is desirable to have a semiconductor laser device having shorter wave lengths of oscillation than are possible with conventional semiconductor lasers. To accomplish this, a semiconductor laser device is formed having a double-hetero structure, which comprises a semiconductor substrate composed of a GaAsP crystal, a first cladding layer formed on the substrate and composed of a GaAlAsP crystal of one conducting type, an active layer formed on the first cladding layer and composed of GaInAsP crystal, and a second cladding layer formed on the active layer and composed of a GaAlAsP crystal of the conducting type reverse to that of the first cladding layer. The cladding layers disposed on both sides of the active layer have a lower refractivity and a larger band gap than the active layer.
REFERENCES:
J. Coleman et al., "Liquid Phase Epitaxial In.sub.i-x Gax P.sub.i-z Asz/GaAs.sub.i-y Py Heterojunction Lasers", IEEE J. of Quantum Electronics, vol. QE-11, No. 7, Jul. 1975, pp. 471-476.
J. Coleman et al., "Yellow In.sub.i-x Gax Pt.sub.i-z Asz Double-Heterojunction Lasers," Journal of Applied Physics, vol. 47, No. 5, May 1976, pp. 2015-2019.
P. Wright et al., "In.sub.i-x Gax P.sub.i-z Asz Double-Heterojunction-Laser Operation (77.degree.K., yellow) in an External Grating Cavity," J. of Applied Physics, vol. 47, No. 8, Aug. 1976, pp. 3580-3586.
J. Coleman et al., "Pulsed Room-Temperature Operating of In.sub.i-x GaxP.sub.i-z Asz Double Heterojunction Lasers, at High Energy 16470A, 1.916ev)", Applied Physics Letters, vol. 29, No. 3, 1 Aug. 1976, pp.167-169.
J. Coleman et al., "Room-Temperature Visible In.sub.i-x GaxP.sub.i-z As(x.ltorsim. l,z.about.0.6) Heterojunction Lasers," Conference Proceedings of the 6th International Symposium on _Gallium Arsenide and Related Compounds, Edinburgh, Scotland, 20-22, Sep. 1976, pp. 339-345.
Hirao Motohisa
Kajimura Takashi
Kuroda Takao
Nakamura Michiharu
Umeda Jun-ichi
Davie James W.
Hitachi , Ltd.
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