Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1991-06-21

1992-11-17

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

051649519

ABSTRACT:
A semiconductor laser device includes a first cladding layer, an active layer, and a second cladding layer with a central ridge on a substrate. A current blocking layer is disposed on the second cladding layer burying the ridge. A contact layer is disposed on the current blocking layer and the ridge. The portion of the second cladding layer adjacent to the active layer has a greater resistivity than a portion of the second cladding layer remote from the active layer, reducing leakage current.

REFERENCES:
patent: 4852110 (1989-07-01), Fujii et al.
patent: 5003549 (1991-03-01), Mitsui et al.
Yonezu et al., "A Ga-Al.sub.x Ga.sub.1-x As Double Heterostructure Planar Stripe Laser", Japanese Journal of Applied Physics, vol. 12, No. 10, Oct. 1973, pp. 1585-1592.

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