Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1994-08-12

1996-12-31

Davie, James W.

Coherent light generators

Particular temperature control

Heat sink

257675, 372 34, 372 49, 372109, H01S 304, H01L 2348

Patent

active

055901441

ABSTRACT:
A semiconductor laser device includes a lead frame for electrically controlling a laser diode element having at least one end face for emitting a laser beam and for mechanically supporting the laser diode element on a planar major surface thereof with a support member interposed therebetween. A sealing resin layer, transparent to the passage of the laser beam, covers at least the laser diode element on the lead frame in a sealing manner. To improve the light emitting point stability of the laser diode element, when the cross section of the planar major surface of the lead frame is parallel to the light emitting end face, a horizontal direction is the longitudinal direction of the cross section of the lead frame, a horizontal center line defines the center of the cross section of the lead frame, and a vertical center line defines the center as viewed in the vertical direction, the sealing resin layer is shaped symmetrically with respect to the vertical center line.

REFERENCES:
patent: 4638343 (1987-01-01), Althaus et al.
patent: 4712127 (1987-12-01), Colombo et al.
patent: 4852112 (1989-07-01), Kagawa et al.
patent: 4951291 (1990-08-01), Miyauchi et al.
patent: 4951292 (1990-08-01), Kuindersma et al.
patent: 4962985 (1990-10-01), LeGrange
patent: 4975922 (1990-12-01), Sakane et al.
patent: 4985370 (1991-01-01), Ponjce et al.
patent: 5140384 (1992-08-01), Tanaka
patent: 5208188 (1993-05-01), Newman
patent: 5252944 (1993-10-01), Caddock, Jr.
patent: 5307362 (1994-04-01), Tanaka et al.
patent: 5309460 (1994-05-01), Fujimaki et al.
Patent Abstracts of Japan, vol. 14, No. 507 (E-998) Nov. 6, 1990, abstract, JP 2 209 786, Miyahara Hiroyuki et al., Semiconductor Laser Device.
Patent Abstracts of Japan, vol. 14, No. 507 (E-998) Nov. 6, 1990, abstract, JP 2 209 785, Miyahara Hiroyuki et al., Optical Semiconductor Device.
Patent Abstracts of Japan, vol. 13, No. 541 (E-854) Dec. 5, 1989, abstract, JP 1 222 492, Kume Masahiro et al., Semiconductor Laser Device.
Patent Abstracts of Japan, vol. 10, No. 69 (E-389) Mar. 18, 1986, abstract, JP 60 217 687, Sawai Masaaki, Light-Emitting Electronic Device.
Patent Abstracts of Japan, vol. 12, No. 486 (E-695) Dec. 19, 1988, abstract JP 63 200 583, Yano Morichika et al., Semiconductor Laser Device.
Patent Abstracts of Japan, vol. 17, No. 238 (E-1363) relating to Japanese Patent document 4-364791, published Dec. 17, 1991, Abstract published May 13, 1993.

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