Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1989-07-21

1990-11-27

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 50, 372 96, H01S 319

Patent

active

049742329

ABSTRACT:
A semiconductor laser device comprises a substrate having an n-type buffer layer, a semiconductor laser element and auxiliary element, provided side by side on the buffer layer. The semiconductor laser element includes a mesa portion having a p-type low resistant semiconductor region provided above the buffer layer, an active region consisting of a semiconductor formed on the buffer layer and low resistant region, a pair of buried portions integrally formed with the low resistive region and formed on and contiguous to opposite sides of the active region in the width direction. A lateral hole is provided between the buffer layer and low resistive region on the side of buried portion. The auxiliary element includes a high resistive regions integrally formed with the low resistant region and positioned on the sides of low resistive region.

REFERENCES:
patent: 4815087 (1989-03-01), Hayashi
patent: 4862474 (1989-08-01), Morinaga et al.

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