Coherent light generators – Particular active media – Semiconductor
Patent
1993-07-14
1995-02-28
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 47, 372 45, H01S 319
Patent
active
053944240
ABSTRACT:
There is provided a semiconductor laser device capable of emitting a laser beam having stable transverse modes. A ridge type semiconductor laser device comprises an upper clad layer 15 left on its active layer to a thickness (d) between 0.25 and 0.50 m in order to ensure a stable production of fundamental transverse modes for laser operation and a rib-shaped clad layer 16 having a bottom width (W) between 2.0 .mu.m and 3.5 .mu.m and projecting from the upper clad layer in juxtaposition with the light emitting region of the active layer 13. When d and W are found within the respective ranges, the device emits a laser beam having stable transverse modes.
REFERENCES:
Ijichi et al, "High Power Operation of 0.98 .mu.m InGaAs/GaAs/InGaP Strained Layer Quantum Well Laser", Denshi Tokyo No. 30, 1991, pp. 21-24.
Ohkubo et al, "Aluminium Free InGaAs/GaAs/InGaAsP/InGaP Grinsch SL-SQW Lasers at 0.98 .mu.m", Electronics Letters, Jun. 4, 1992, vol. 28, No. 12, pp. 1149-1150.
Ohkubo et al. "0.98 .mu.m InGaAs-InGaAsP-InGaP GRIN-SCH SL-SQW Laser for Coupling High Optical Power into Single-Mode Fiber" IEEE Jour. of Quant Electronics, vol. 29, No. 6, Jun. 1993, pp. 1932-1935.
Sin et al, "High Power InGaAs-GaAs-InGaP Distributed Feedbacks Buried Heterostructure Strained Quantum Well Lasers Grown by Three Step MOVPE", Electronics Letters, Feb. 4, 1993, vol. 29, No. 3, pp. 253-254.
Ijichi Tetsuro
Irikawa Michinori
Mand Ranjit S.
Xu Jingming
Epps Georgia Y.
The Furukawa Electric Co. Ltd.
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