Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1986-07-28

1988-04-26

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 36, 372 44, H01S 319

Patent

active

047409770

ABSTRACT:
A semiconductor laser device arranged so that at least one of cladding layers is formed of a thin AlGaInP layer having a larger energy band gap as compared with an active layer adjacent to the active layer and an AlGaAs layer having a high thermal conductivity as compared with that of the AlGaInP layer and the larger energy band gap as compared with the active layer, which is located between the AlGaInP layer and a heat sink, whereby a heat generated in the active layer is effectively radiated to the heat sink, thus the semiconductor laser being made capable of continuously emitting a laser light of a short wavelength at a room temperature.

REFERENCES:
patent: 3911376 (1975-10-01), Thompson
patent: 4585491 (1986-04-01), Burnham et al.

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