Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1984-03-23

1988-04-26

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, H01S 319

Patent

active

047409762

ABSTRACT:
A semiconductor laser device comprises a semiconductor layer stack consisting of a first clad layer, an active layer, and a second clad layer which are successively stacked on a semiconductor substrate, and a light absorbing layer and a current blocking layer which are stacked on the second clad layer; the semiconductor assembly including a stripe shaped groove which extends from the surface of the semiconductor layer stack to the surface or interior of the second cladding layer, and another semiconductor layer having a forbidden band width greater than the active layer and the same conductivity type as the second clad layer which is embedded into the groove by chemical vapor deposition method.

REFERENCES:
patent: 4480331 (1984-10-01), Thompson
J. J. Coleman et al., "High-Barrier Cluster-Free Al.sub.x Ga.sub.1-x As-AlAs-GaAs Quantum-Well Heterostructure Laser", Appl. Phys. lett. 38(2), Jan. 15, 1981, pp. 63-65.

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