Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1977-10-19

1979-11-27

Davie, James W.

Oscillators

Molecular or particle resonant type

357 18, H01S 319

Patent

active

041763254

ABSTRACT:
A semiconductor laser device capable of emitting highly collimated beams, especially of a narrow beam divergence, is disclosed. A striped hetero-junction is formed on a predetermined semiconductor substrate by a first semiconductor layer (refractive index: n.sub.1, band gap: Eg.sub.1, thickness: d), a second semiconductor layer (n.sub.2) and a third semiconductor layer (n.sub.3), and the hetero-junction is sandwiched between portions of a fourth semiconductor layer (n.sub.4, Eg.sub.4) into a buried structure. At this time, the various materials are selected to follow the relations of d.ltoreq..lambda. (where .lambda. denotes the oscillation wavelength of the semiconductor laser), n.sub.2, n.sub.3 <n.sub.4 <n.sub.1, and Eg.sub.1 <Eg.sub.4, and the effective refractive index of the first semiconductor layer (n.sub.1eq) is made smaller than n.sub.4.

REFERENCES:
patent: 4121177 (1978-10-01), Tsukada
Itoh et al., "Embedded-Stripe GaAs-GaAlAs Double-Heterostructure Lasers with Polycrystalline GaAsP Layers-1: Lasers with Cleaved Mirrors," IEEE Journal of Quantum Electronics, vol. QE-13, No. 8, Aug. 1977, pp. 623-627.(
Burnham et al., "Distributed Feedback Buried Heterostructure Diode Laser," Applied Physics Letters, vol. 29, No. 5, Sep. 1, 1976, pp. 287-289.
Tsukada, "GaAs-Ga.sub.1-x Al.sub.x As Buried-Heterostructure Injection Lasers," J. of Applied Physics, vol. 45, No. 11, Nov. 1974, pp. 4899-4906.

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