Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1995-11-14

1998-05-05

Jackson, Jerome

Coherent light generators

Particular active media

Semiconductor

438 31, 438 41, 438 47, H01S 319, H01L 21302

Patent

active

057486590

ABSTRACT:
A method of fabricating a semiconductor laser device includes growing a first conductivity type InGaAsP mass-transport suppressing layer, a first conductivity type InP second lower cladding layer, an InGaAsP active layer, and a second conductivity type InP upper cladding layer on the entire surface of a first conductivity type InP first lower cladding layer, forming a mesa structure serving as a waveguide by etching and removing a portion where a waveguide is to be formed, and forming current blocking layers which confine a current to the waveguide on the opposite sides of the mesa structure by MOCVD. Since the first conductivity type InP second lower cladding layer is sandwiched between the InGaAsP mass-transport suppressing layer and the InGaAsP active layer, mass-transport of In atoms on the opposite sides of the second lower cladding layer is suppressed when the temperature rises before the growth of the current blocking layers. The deformation of opposite sides of the second lower cladding layer is prevented. Therefore, the leakage path width is controlled to a range where the light output power is a maximum, whereby a semiconductor laser device having improved maximum light output power is obtained.

REFERENCES:
patent: 5345464 (1994-09-01), Takemoto
patent: 5390205 (1995-02-01), Mori et al.
patent: 5440147 (1995-08-01), Kazmierski et al.
patent: 5459747 (1995-10-01), Takiguchi et al.

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