Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1994-08-05

1995-07-25

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

054369240

ABSTRACT:
Successively formed on an n-type InP substrate are an n-type InP first clad layer 1, an undoped GainAsP first light guide layer 11, an active layer 3 of the multiple quantum well structure arranged with the number of wells being 5 to 10 and the radiation wavelength being about 1.3 .mu.m, an undoped GainAsP second light guide layer 12, and a p-type InP clad layer 2, which are processed to constitute a mesa-type active region. The width of the active layer 3 is not less than 0.7 .mu.m and not more than 1.0 .mu.m, whereby the spectral width can be made not more than 2.5 nm in the temperature range of -45.degree. to +85.degree. C.

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