Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1981-07-15

1984-01-17

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, H01S 319

Patent

active

044267029

ABSTRACT:
This invention consists in improvements in a buried-heterostructure laser with buried optical guide, and facilitates the oscillation of the laser in the fundamental mode thereof and also enhances the available percentage of production of the laser. An active layer and an optical guide layer are sandwiched between two cladding layers, to form an optical confinement region. The width of the semiconductor material assembly varies in the direction of the stacked layers, and the narrowest part thereof is located on a side opposite to the optical guide layer with reference to the position of the active layer. The side surface of said semiconductor material assembly parallel to the traveling direction of laser radiation is buried by a burying layer.

REFERENCES:
Tsang et al., "GaAs-Al.sub.x Ga.sub.l-x As Buried-Heterostructure . . . ", Appl. Phys. Lett., 36(9), May 1, 1980, pp. 730-733.
Nakashima et al., "Transverse Mode Control . . . ", Japanese Journal of Applied Physics, vol. 19, No. 10, Oct. 1980, pp. L591-L594.
Chinone et al., "Highly Efficient (GaAl)As Buried-Heterostructure . . . ", Appl. Phys. Lett., 35(7), Oct. 1, 1979, pp. 513-516.
S. Arai et al., "Buried Heterostructure Lasers", Electronics Letters, May 8, 1980, vol. 16, No. 10, pp. 349-350.

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