Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1994-04-05

1997-02-04

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

056006675

ABSTRACT:
A semiconductor laser device having an active layer, a pair of cladding layers interposing the active layer and a multi-quantum barrier provided between one of the pair of cladding layers and the active layer is provided. The multi-quantum barrier includes barrier layers and well layers being alternated with each other. Thickness, energy band gap, or impurity concentration of at least one of the barrier layers and well layers in the multi-quantum barrier changes with the distance from the active layer, thereby providing a stable function of reflecting carriers overflowing from the active layer back to the active layer.

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Iga et al., "Electron Reflectance of Multiquantum Barrier (MQB)", Electronics Letters, Sep. 11, 1986 vol. 22, No. 19, pp. 1008-1009.
T. Takagi, et al., "Potential Barrier Height Analysis of AlGaInP Multi-Quantum Barrier (MQB)", Japanese Journal of Applied Physics, vol. 29, No. 11, pp. L 1977-L 1980 (Nov. 1990).
T. Takagi et al., "Design and Photoluminescence Study on a Multiquantum Barrier", IEEE Journal of Quantum Electronics, vol. 27, No. 6, pp. 1511-1519 (Jun. 1991).
T. Takagi et al., "Photoluminescence Study of Electron Wave Confinement in Multi-Quantum Barrier (MQB)", Japanese Journal of Applied Physics, vol. 29, No. 11, pp. L 1969-L 1972 (Nov. 1990).

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