Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1995-04-26

1997-07-01

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

056445873

ABSTRACT:
A semiconductor laser device includes a semiconductor substrate, upper and lower cladding layers each having a composition lattice-matching with the semiconductor substrate, which lower cladding layer is disposed on the semiconductor substrate, and an active layer having a quantum well structure interposed between the upper and lower cladding layers. The active layer includes alternating well layers and barrier layers and outermost guide layers, and these are arranged so that two of the barrier layers and the guide layers sandwich each well layer. The guide layers lattice-match with the upper and lower cladding layers, and the well layer has a lattice constant different from lattice constants of the two layers sandwiching the well layer, thereby applying a tensile strain to the well layer. The tensile strain reduces the effective mass of holes in the quantum well active layer, resulting in low threshold current, high efficiency, and high-power output.

REFERENCES:
patent: 5339325 (1994-08-01), Kito et al.
Tanbun-Ek et al., "Effects of Strain in Multiple Quantum Well Distributed feedback Lasers", Appl. Phys. Letter, Nov. 1990, vol. 57, No. 21, pp. 2184-2186.
Kimura et al., "Strain Dependence of the Linewidth Enhancement Factor in Long-Wavelength Tensile-and Compressive-Strained Quantum-Well Lasers", IEEE Photonics Technology Letters, Sep. 1993, vol. 5, No. 9, pp. 983-986.
Mathur et al., "Comparative Study of Low-Threshold 1.3.mu.m Strained and Lattice-Matched Quantum-Well Lasers", IEEE Photonics Technology Letters, Jul. 1993, vol. 5, No. 7, pp. 753-755.
Nishi et al., "Optical Characterizations of (111) Oriented InGaAs/InAlAsstrained Quantum Wells Grown on InP Substrates", J. Appl. Phys., Nov. 1991, vol. 70, No. 9, pp. 5004-5009.
Thijs et al., "High Temperature Operation of .gamma.=1.5 .mu.m Tensile Strained Multiple Quantum Well SIPBH Lasers", Electronics Letters, Feb. 1991, vol. 27, No. 10, pp. 791-793.
Wang et al., "AlInGaAs-AlGaAs Strained Single-Quantum-Well Diode Lasers", IEEE Photonics Technology Letters, vol. 3, No. 1, 1991, 1 Jan.
Hiroshi Ishikawa, "Theoretical Gain of Strained Quantum Well Grown on a InGaAs Ternary Substrate", Applied Physics Letter, vol. 63, No. 6, Aug. 9, 1993.
Thijs et al., "High-Performance .gamma.=1.3 .mu.m InGaAsP-Inp Strained-Layer Quantum Well Lasers", Journal of Lightwave Technology, Jan. 12, 1994, vol. 12, No. 1, pp. 28-37.
H. Tanaka, "780nm Band TM-Mode Laser Operation of GaAsP/AlGaAs Tensile-Strained Quantum-Well Lasers", Electronics Letters, Sep. 2, 1993, vol. 29, pp. 1611-1613.
Watanabe et al., "High Temperature (77.degree. C.) Operation of 634nm InGaAlp Multiquantum-Well Laser Diodes with Tensile-Strained Quantum Wells", Applied Physics Letters, Sep. 13, 1993, vol. 63, No. 11, pp. 1486-1488.

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